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| SI1906DL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V ID (mA) 250 150 SOT-363 SC-70 (6-Leads) Marking Code PC G1 D2 2 3 5 4 G2 S2 XX YY Lot Traceability and Date Code Part # Code S1 1 6 D1 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit 20 "8 250 200 500 0.20 0.13 -55 to 150 Unit V mA A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 625 Unit _C/W Document Number: 71305 S-01885--Rev. A, 28-Aug-00 www.vishay.com 1 SI1906DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.0 V, VGS = 2.5 V VDS = 8.0 V, VGS = 4.5 V VGS = 2.5 V, ID = 150 mA VGS = 4.5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V 120 400 160 mA 800 1.6 1.2 200 0.7 1.2 2.5 2.0 mS V W 20 0.4 24 V 0.9 "2 0.001 1.5 "100 100 5 mA nA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss 5.0 V, V, MHz VDS = 5 0 V VGS = 0 V f = 1 MH VDS = 5.0 V, VGS = 4 5 V ID = 100 mA 50V 4.5 V, A 350 25 100 20 14 5 pF F 450 pC C Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 3 0 V, RL = 100 W 3.0 V, ID = 0.25 A, VGEN = 4 5 V RG = 10 W 0 25 A 4.5 V, 7 25 19 9 12 35 ns 30 15 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71305 S-01885--Rev. A, 28-Aug-00 SI1906DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.25 VGS = 3.5 thru 5 V 1.00 I D - Drain Current (A) I D - Drain Current (A) 0.6 25_C 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0 0 1 2 3 4 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 TC = -55_C Vishay Siliconix Transfer Characteristics 0.4 125_C 0.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 r DS(on) - On-Resistance ( W ) 40 5 4 3 VGS = 2.5 V 2 1 0 0 1 2 ID - Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 C - Capacitance (pF) 50 Capacitance 30 20 Coss 10 Crss Ciss 8 12 16 20 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 100 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 100 m A 6 r DS(on) - On-Resistance (W) (Normalized) 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 200 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 71305 S-01885--Rev. A, 28-Aug-00 www.vishay.com 3 SI1906DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 1 I S - Source Current (A) TJ = 125_C r DS(on) - On-Resistance ( W ) 6 8 On-Resistance vs. Gate-to-Source Voltage 0.1 ID = 250 mA 4 TJ = 25_C 0.01 TJ = -55_C 2 0.001 0.00 0.3 0.6 0.9 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 50 mA 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.vishay.com 4 Document Number: 71305 S-01885--Rev. A, 28-Aug-00 |
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